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RU40E32L Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU40E32L N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU40E32L
Manufacturer Ruichips
File Size 275.09 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU40E32L-Ruichips.pdf

General Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 40 ±16 175 -55 to 175 45 ① 180 ② 45 32 52 26 2.9 90 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.

A– JUN., 2012 .ruichips.

RU40E32L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU40E32L Unit Min.

Key Features

  • 40V/45A, RDS (ON) =9mΩ(tpy. )@VGS=10V RDS (ON) =15mΩ(tpy. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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