RU40E80L Description
D G S TO252 D G Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC -Junction to Case RθJA -Junction to Ambient...
RU40E80L Key Features
- 40V/80A, RDS (ON) =4.5mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V
- Low RDS (ON)
- Super High Dense Cell Design
- ESD protected
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)