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RU40E80L Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU40E80L N-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU40E80L
Manufacturer Ruichips
File Size 314.28 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU40E80L-Ruichips.pdf

General Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– APR., 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 40 ±16 175 -55 to 175 80 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 320 A 80 A 62 96 W 48 1.55 °C/W 100 °C/W 256 mJ .ruichips.

RU40E80L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU40E80L Min.

Key Features

  • 40V/80A, RDS (ON) =4.5mΩ(Typ. )@VGS=10V RDS (ON) =5.5mΩ(Typ. )@VGS=4.5V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • ESD protected.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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