RU60450Q - N-Channel Advanced Power MOSFET

Description

G DS TO247 D i G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ①

Features

60V/450A, RDS (ON) =1.3mΩ(Typ. )@VGS=10V.
Ultra Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU60450Q
Manufacturer	Ruichips
File Size	272.04 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU60450Q Datasheet
Additional preview pages of the RU60450Q datasheet.

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Full PDF Text Transcription

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RU60450Q N-Channel Advanced Power MOSFET Features • 60V/450A, RDS (ON) =1.3mΩ(Typ.

Published: Apr 4, 2016 |