RU6051K - N-Channel Advanced Power MOSFET

Description

GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs

Features

60V/50A, RDS (ON) =10mΩ(Typ. )@VGS=10V RDS (ON) =12mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

📥 Download Datasheet

Datasheet Details

Part number	RU6051K
Manufacturer	Ruichips
File Size	389.63 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU6051K Datasheet
Additional preview pages of the RU6051K datasheet.

📁 Similar Datasheet

RU6055 - Sensors (ifm)
RU602B - N-Channel 60V MOSFET (VBsemi)
RU6199 - N-Channel Advanced Power MOSFET (Ruichips Semiconductor)

Other Datasheets by Ruichips

RU6051L - N-Channel Advanced Power MOSFET
RU6050L - N-Channel Advanced Power MOSFET
RU6050R - N-Channel Advanced Power MOSFET
RU6050S - N-Channel Advanced Power MOSFET
RU6055L - N-Channel Advanced Power MOSFET
RU6055R - N-Channel Advanced Power MOSFET
RU6055S - N-Channel Advanced Power MOSFET
RU60100R - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

RU6051K N-Channel Advanced Power MOSFET Features • 60V/50A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =12mΩ(Typ.)@VGS=4.

Published: Apr 4, 2016 |