Datasheet4U Logo Datasheet4U.com

RU6051L - N-Channel Advanced Power MOSFET

General Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300

Key Features

  • 60V/50A, RDS (ON) =10mΩ(Typ. )@VGS=10V RDS (ON) =12mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

📥 Download Datasheet

Datasheet Details

Part number RU6051L
Manufacturer Ruichips
File Size 415.94 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6051L Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RU6055 Sensors ifm
RU602B N-Channel 60V MOSFET VBsemi
RU6199 N-Channel Advanced Power MOSFET Ruichips Semiconductor

Other Datasheets by Ruichips

Part Number Description
RU6051K N-Channel Advanced Power MOSFET
RU6050L N-Channel Advanced Power MOSFET
RU6050R N-Channel Advanced Power MOSFET
RU6050S N-Channel Advanced Power MOSFET
RU6055L N-Channel Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RU6051L N-Channel Advanced Power MOSFET Features • 60V/50A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =12mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management. • Switch Applications.