Description
GDS TO251
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient
Drain-Source Ava
Features
- 60V/50A, RDS (ON) =10mΩ(Typ. )@VGS=10V RDS (ON) =12mΩ(Typ. )@VGS=4.5V.
- Super High Dense Cell Design.
- Ultra Low On-Resistance.
- 100% avalanche tested.
- Lead Free and Green Devices Available (RoHS Compliant).
RU6051K Datasheet
