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RU6051K Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU6051K N-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU6051K
Manufacturer Ruichips
File Size 389.63 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU6051K-Ruichips.pdf

General Description

GDS TO251 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– OCT., 2013 1 S N-Channel MOSFET Rating Unit TC=25°C 60 ±20 175 -55 to 175 50 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 200 A 50 A 36 71 W 36 2.1 °C/W 100 °C/W 100 mJ .ruichips.

RU6051K Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6051K Min.

Key Features

  • 60V/50A, RDS (ON) =10mΩ(Typ. )@VGS=10V RDS (ON) =12mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Ultra Low On-Resistance.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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