Datasheet4U Logo Datasheet4U.com

RU60E16R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

📥 Download Datasheet

Datasheet Details

Part number RU60E16R
Manufacturer Ruichips
File Size 297.00 KB
Description N-Channel Advanced Power MOSFET
Download RU60E16R Download (PDF)

General Description

TO-220 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 60 ±20 175 -55 to 175 ① 16 ② 64 ① 16 13 42 21 3.5 30 Unit V °C °C A A A W W

Overview

RU60E16R N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 60V/16A, RDS (ON) =60mΩ(Typ. )@VGS=10V RDS (ON) =75mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • ESD protected.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

More Datasheets from Ruichips

Part Number Description
RU60E16L N-Channel Advanced Power MOSFET
RU60E25K N-Channel Advanced Power MOSFET
RU60E25L N-Channel Advanced Power MOSFET
RU60E25R N-Channel Advanced Power MOSFET
RU60E5D N-Channel Advanced Power MOSFET
RU60E5H N-Channel Advanced Power MOSFET
RU60E6D N-Channel Advanced Power MOSFET
RU60E6H N-Channel Advanced Power MOSFET
RU60100R N-Channel Advanced Power MOSFET
RU60101R N-Channel Advanced Power MOSFET