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RU60E25K Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU60E25K
Manufacturer Ruichips
File Size 598.18 KB
Description N-Channel Advanced Power MOSFET
Download RU60E25K Download (PDF)

General Description

G DS TO251 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings EAS③ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

A– AUG

Overview

RU60E25K N-Channel Advanced Power MOSFET.

Key Features

  • 60V/25A, RDS (ON) =30mΩ(Typ. )@VGS=10V RDS (ON) =40mΩ(Typ. )@VGS=4.5V.
  • ESD protected.
  • Reliable and Rugged.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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