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RU60E25R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU60E25R
Manufacturer Ruichips
File Size 299.52 KB
Description N-Channel Advanced Power MOSFET
Download RU60E25R Download (PDF)

General Description

TO-220 Applications • Power Management Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 60 ±20 175 -55 to 175 ① 25 ② 100 ① 25 20 54 27 2.8 42 Unit V °C °C A A A W W °C/W mJ Copyright© Ruichips

Overview

RU60E25R N-Channel Advanced Power MOSFET MOSFET.

Key Features

  • 60V/25A, RDS (ON) =35mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • ESD protected.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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