RU6888M Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RU6888M n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RU6888M
Manufacturer	Ruichips
File Size	301.06 KB
Description	N-Channel Advanced Power MOSFET
Download	RU6888M Download (PDF)

General Description

PDFN5060 Applications • Power Management.

Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev.

A– DEC., 2011 N-Channel MOSFET TC=25°C TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C Rating Unit 60 ±25 150 -55 to 150 ① 50 V °C °C A ② 240 ① 62 40 ③ 16 ③ 13 62.5 25 ③ 4.2 ③ 2.7 A A W www.ruichips.com

Overview

RU6888M N-Channel Advanced Power MOSFET.

Key Features

60V/62A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

More Datasheets from Ruichips

Part Number	Description
RU6888	N-Channel Advanced Power MOSFET
RU6888R	N-Channel Advanced Power MOSFET
RU6888R3	N-Channel Advanced Power MOSFET
RU6888S	N-Channel Advanced Power MOSFET
RU6881R	N-Channel Advanced Power MOSFET
RU60100R	N-Channel Advanced Power MOSFET
RU60101R	N-Channel Advanced Power MOSFET
RU60120R	N-Channel Advanced Power MOSFET
RU60190R	N-Channel Advanced Power MOSFET
RU60200R	N-Channel Advanced Power MOSFET