RU6888S Key Features
- 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V
- Ultra Low On-Resistance
- Exceptional dv/dt capability
- Fast Switching and Fully Avalanche Rated
- 100% avalanche tested
- 175°C Operating Temperature
- Lead Free and Green Available
- Part: RU6888S
- Manufacturer: Ruichips
- Size: 291.63 KB
Related Ruichips Datasheets
| Part Number | Description |
|---|---|
| RU6888 | N-Channel Advanced Power MOSFET |
| RU6888M | N-Channel Advanced Power MOSFET |
| RU6888R | N-Channel Advanced Power MOSFET |
| RU6888R3 | N-Channel Advanced Power MOSFET |
| RU6881R | N-Channel Advanced Power MOSFET |
RU6888S Description
TO-263 N-Channel MOSFET Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC -Junction to Case Drain-Source Avalanche...