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RU6888 - N-Channel Advanced Power MOSFET

General Description

TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current

Key Features

  • 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Available.

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Datasheet Details

Part number RU6888
Manufacturer Ruichips
File Size 450.07 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6888 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU6888 N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6.