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RU6888M - N-Channel Advanced Power MOSFET

General Description

PDFN5060 Applications

Power Management.

Key Features

  • 60V/62A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU6888M
Manufacturer Ruichips
File Size 301.06 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6888M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU6888M N-Channel Advanced Power MOSFET Features • 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description PDFN5060 Applications • Power Management. Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC.