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RU6888M - N-Channel Advanced Power MOSFET

General Description

PDFN5060 Applications

Power Management.

Key Features

  • 60V/62A, RDS (ON) =7mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number RU6888M
Manufacturer Ruichips
File Size 301.06 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6888M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU6888M N-Channel Advanced Power MOSFET Features • 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description PDFN5060 Applications • Power Management. Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev. A– DEC.