RU6888M Key Features
- 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V
- Super High Dense Cell Design
- Reliable and Rugged
- 100% avalanche tested
- Lead Free and Green Devices Available (RoHS pliant)
- Part: RU6888M
- Manufacturer: Ruichips
- Size: 301.06 KB
Related Ruichips Datasheets
| Part Number | Description |
|---|---|
| RU6888 | N-Channel Advanced Power MOSFET |
| RU6888R | N-Channel Advanced Power MOSFET |
| RU6888R3 | N-Channel Advanced Power MOSFET |
| RU6888S | N-Channel Advanced Power MOSFET |
| RU6881R | N-Channel Advanced Power MOSFET |
RU6888M Description
PDFN5060 Applications Power Management. Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Copyright Ruichips...