RU6H9R - N-Channel Advanced Power MOSFET

Description

TO-220 Applications High efficiency switch mode power supplies Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG

Features

600V/9.5A, RDS (ON) =0.7Ω (Typ. ) @ VGS=10V.
Gate charge minimized.
Low Crss( Typ. 20pF).
Extremely high dv/dt capability.
100% avalanche tested.
Lead Free and Green Available Pin.

Ruichips

📥 Download Datasheet

Datasheet Details

Part number	RU6H9R
Manufacturer	Ruichips
File Size	281.21 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU6H9R Datasheet
Additional preview pages of the RU6H9R datasheet.

📁 Similar Datasheet

RU602B - N-Channel 60V MOSFET (VBsemi)
RU6055 - Sensors (ifm)
RU6199 - N-Channel Advanced Power MOSFET (Ruichips Semiconductor)

Other Datasheets by Ruichips

RU6H9P - N-Channel Advanced Power MOSFET
RU6H10P - N-Channel Advanced Power MOSFET
RU6H10R - N-Channel Advanced Power MOSFET
RU6H11R - N-Channel Advanced Power MOSFET
RU6H1L - N-Channel Advanced Power MOSFET
RU6H2K - N-Channel Advanced Power MOSFET
RU6H2L - N-Channel Advanced Power MOSFET
RU6H2R - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

RU6H9R N-Channel Advanced Power MOSFET MOSFET Features • 600V/9.5A, RDS (ON) =0.7Ω (Typ.) @ VGS=10V • Gate charge minimized • Low Crss( Typ.

Published: Apr 26, 2016 |