Datasheet4U Logo Datasheet4U.com

RU6H10R Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU6H10R N-Channel Advanced Power MOSFET MOSFET.

Datasheet Details

Part number RU6H10R
Manufacturer Ruichips
File Size 439.18 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU6H10R-Ruichips.pdf

General Description

TO-220 TO-263 TO-220F TO-247 Applications • High efficiency switch mode power supplies • Electronic lamp ballasts based on half bridge N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 600 ±30 150 -55 to 150 10 40 ① 10 7 185 73 0.68 450 Unit V °C °C A A A W °C/W mJ Copyright© Ruichips Semiconductor Co., Ltd Rev.

B – JAN., 2011 .ruichips.

RU6H10R Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H10R Unit Min.

Key Features

  • 600V/10A, RDS (ON) =0.65Ω (Type) @ VGS=10V.
  • Gate charge minimized.
  • Low Crss( Typ. 15pF).
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Lead Free and Green Available Pin.

RU6H10R Distributor