Datasheet4U Logo Datasheet4U.com

RU6H10R - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

TO-220 TO-263 TO-220F TO-247 Applications High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS

Features

  • 600V/10A, RDS (ON) =0.65Ω (Type) @ VGS=10V.
  • Gate charge minimized.
  • Low Crss( Typ. 15pF).
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Lead Free and Green Available Pin.

📥 Download Datasheet

Datasheet preview – RU6H10R

Datasheet Details

Part number RU6H10R
Manufacturer Ruichips
File Size 439.18 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU6H10R Datasheet
Additional preview pages of the RU6H10R datasheet.

📁 Similar Datasheet

  • RU602B - N-Channel 60V MOSFET (VBsemi)
  • RU6055 - Sensors (ifm)
  • RU6199 - N-Channel Advanced Power MOSFET (Ruichips Semiconductor)
Other Datasheets by Ruichips
  • RU6H10P - N-Channel Advanced Power MOSFET
  • RU6H11R - N-Channel Advanced Power MOSFET
  • RU6H1L - N-Channel Advanced Power MOSFET
  • RU6H2K - N-Channel Advanced Power MOSFET
  • RU6H2L - N-Channel Advanced Power MOSFET
  • RU6H2R - N-Channel Advanced Power MOSFET
  • RU6H4R - N-Channel Advanced Power MOSFET
  • RU6H5L - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
RU6H10R N-Channel Advanced Power MOSFET MOSFET Features • 600V/10A, RDS (ON) =0.65Ω (Type) @ VGS=10V • Gate charge minimized • Low Crss( Typ.
Published: |