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RU6H11R Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU6H11R
Manufacturer Ruichips
File Size 282.73 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU6H11R-Ruichips.pdf

General Description

TO-220 Applications • High efficiency switch mode power supplies • Lighting N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ② EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev.

A – JUL., 2012 Rating 600 ±30 150 -55 to 150 10 ① 40 ① 10 ① 6.4 162 65 0.77 6.2 Unit V °C °C A A A W °C/W mJ .ruichips.

RU6H11R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H11R Unit Min.

Key Features

  • 600V/10A, RDS (ON) =0.75Ω (Typ. ) @ VGS=10V.
  • Gate charge minimized.
  • Low Crss( Typ. 12pF).
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Lead Free and Green Available RU6H11R N-Channel Advanced Power MOSFET MOSFET Pin.

RU6H11R Distributor