RU6H2K - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP

Features

600V/2A, RDS (ON) =4000mΩ(Typ. )@VGS=10V.
Gate charge minimized.
Low Crss( Typ. 5pF).
Extremely high dv/dt capability.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

Ruichips

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Datasheet Details

Part number	RU6H2K
Manufacturer	Ruichips
File Size	271.21 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU6H2K Datasheet
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RU6H2K N-Channel Advanced Power MOSFET Features • 600V/2A, RDS (ON) =4000mΩ(Typ.)@VGS=10V • Gate charge minimized • Low Crss( Typ.

Published: Apr 26, 2016 |