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RU6H2L Datasheet N-channel Advanced Power MOSFET

Manufacturer: Ruichips

Overview: RU6H2L N-Channel Advanced Power MOSFET.

Datasheet Details

Part number RU6H2L
Manufacturer Ruichips
File Size 313.92 KB
Description N-Channel Advanced Power MOSFET
Datasheet RU6H2L-Ruichips.pdf

General Description

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed S N-Channel MOSFET Rating Unit TC=25°C 600 ±30 150 -55 to 150 2 V °C °C A TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 8A 2 A 1.2 56 W 22 2.2 °C/W 100 °C/W 34 mJ Ruichips Semiconductor Co., Ltd Rev.

A– MAR., 2013 1 .ruichips.

RU6H2L Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU6H2L Min.

Key Features

  • 600V/2A, RDS (ON) =4000mΩ(Typ. )@VGS=10V.
  • Gate charge minimized.
  • Low Crss( Typ. 5pF).
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

RU6H2L Distributor