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RU6Z8R Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

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Datasheet Details

Part number RU6Z8R
Manufacturer Ruichips
File Size 277.80 KB
Description N-Channel Advanced Power MOSFET
Download RU6Z8R Download (PDF)

General Description

Applications • High efficiency switch mode power supplies • Lighting TO220 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev.

B– DEC., 2012 1 N-Channel MOSFET Rating Unit TC=25°C 650 ±30 150 -55 t

Overview

RU6Z8R N-Channel Advanced Power MOSFET.

Key Features

  • 650V/8A, RDS (ON) =900mΩ(Typ. )@VGS=10V.
  • Super High Dense Cell Design.
  • Fast Switching.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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