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HED57XXU12 - Low Power Hall-Effect Switch

Description

The HED57XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology.

It incorporates advanced dynamic offset cancellation techniques to provide accurate and stable magnetic switch points.

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Datasheet preview – HED57XXU12

Datasheet Details

Part number HED57XXU12
Manufacturer Samsung Semiconductor
File Size 473.08 KB
Description Low Power Hall-Effect Switch
Datasheet download datasheet HED57XXU12 Datasheet
Additional preview pages of the HED57XXU12 datasheet.

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Full PDF Text Transcription

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SPECIFICATION MODEL : HED57XXU12 www.DataSheet4U.com Low Power Hall-Effect Switch DRAWN BY CHECKED BY APPROVED BY S.W. PARK 2006.9.19 S.W. KIM 2006.9.19 H.C. JOUNG 2006.9.19 SAMSUNG ELECTRO-MECHANICS CO.,LTD. 314,Maetan 3-Dong,Yeongtong-Gu,Suwon, Kyunggi-Do,KOREA,443-743 HED57XXU12(060919) Rev.0 Page 1/17 Revision history (Model : HED57XXU12) Date 2006.9.19 Rev. No 0 Contents revised Establishment Design S.W.Park Approval H.C.Joung www.DataSheet4U.com HED57XXU12(060919) Rev.0 Page 2/17 1. Description The HED57XXU12 Omnipolar Hall effect sensor IC is fabricated on mixed signal CMOS technology. It incorporates advanced dynamic offset cancellation techniques to provide accurate and stable magnetic switch points.
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