Description
This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Features
- TO-220 TO-251 TO-252 TO-263.
- High ruggedness.
- RDS(ON) (Max 5.3mΩ)@VGS=10V.
- Gate Charge (Typical 69nC).
- Improved dv/dt Capability.
- 100% Avalanche Tested
1 2 3
1 2 3
1 2 3
1 2 3
BVDSS : 30V ID : 100A RDS(ON) : 5.3 mΩ
2
1. Gate 2. Drain 3. Source
General.
SW100N03 Datasheet
