SW110N08A Key Features
- High ruggedness
- RDS(ON) (Max 7.2m Ω)@VGS=10V
- Gate Charge (Typ 107nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Part: SW110N08A
- Manufacturer: SEMIPOWER
- Size: 549.81 KB
Related SEMIPOWER Datasheets
| Part Number | Description |
|---|---|
| SW100N10 | MOSFET |
| SW100N10A | MOSFET |
| SW100N10B | MOSFET |
| SW10N60D | MOSFET |
| SW10N65K | N-Channel MOSFET |
SW110N08A Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.