SW50N06T Key Features
- High ruggedness
- RDS(ON) (Max 16.8mΩ)@VGS=10V
- Gate Charge (Typ 41nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Part: SW50N06T
- Manufacturer: SEMIPOWER
- Size: 707.68 KB
Other SW50N06T Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Sammwin |
SW50N06 | N-Channel MOSFET |
SAMWIN |
SW50N06A | N-channel MOSFET |
SW50N06T Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.