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SEMIPOWER

SW5N60 Datasheet Preview

SW5N60 Datasheet

N-channel TO-220F MOSFET

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SAMWIN
SW5N60
N-channel TO-220F MOSFET
Features
High ruggedness
RDS(ON) (Max 2.2)@VGS=10V
Gate Charge (Typical 22nC)
Improved dv/dt Capability
100% Avalanche Tested
TO-220F
1
2
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 600V
ID : 5.0A
RDS(ON) : 2.2ohm
2
1
3
Order Codes
Item
1
Sales Type
SW F 5N60
Marking
SW5N60
Package
TO-220F
Packaging
TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
600
5.0*
3.15*
20
±30
135
27
5
24
0.19
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
5.3
-
49
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
1/5
http://www.Datasheet4U.com




SEMIPOWER

SW5N60 Datasheet Preview

SW5N60 Datasheet

N-channel TO-220F MOSFET

No Preview Available !

SAMWIN
SW5N60
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VDS=600V, VGS=0V
VDS=480V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 2.5A
VDS = 20 V, ID= 2.5 A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr Rising time
td(off) Turn off delay time
tf Fall time
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=300V, ID=5.0A, RG=25
(note 4,5)
VDS=480V, VGS=10V, ID=5.0A
(note 4,5)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS Continuous source current
ISM Pulsed source current
VSD Diode forward voltage drop.
Trr Reverse recovery time
Qrr Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=5.0A, VGS=0V
IS=5.0A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 11mH, IAS = 5A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3. ISD ≤ 5.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
600
2.0
3
Min.
Typ. Max. Unit
V
0.59
V/oC
1
50
100
-100
uA
uA
nA
nA
4.0 V
1.9 2.2
S
630
65 pF
22
13 25
25 50
ns
39 80
23 50
22 50
4 nC
10
Typ.
267
2.3
Max.
5
20
1.5
Unit
A
A
V
ns
uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. July. 2013. Rev. 3.0
2/5
http://www.Datasheet4U.com


Part Number SW5N60
Description N-channel TO-220F MOSFET
Maker SEMIPOWER
Total Page 5 Pages
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