Datasheet Summary
SAMWIN
Features
- High ruggedness
- RDS(ON) (Max 2.2Ω)@VGS=10V
- Gate Charge (Typical 22nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
N-channel TO-220F MOSFET
TO-220F
BVDSS : 600V ID : 5.0A RDS(ON) : 2.2ohm
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
1 3
Order Codes
Item 1 Sales Type SW F 5N60...