SW6N65 Key Features
- High ruggedness
- RDS(ON) (Max 1.5Ω)@VGS=10V
- Gate Charge (Typ 20nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Part: SW6N65
- Manufacturer: SEMIPOWER
- Size: 515.76 KB
Related SEMIPOWER Datasheets
| Part Number | Description |
|---|---|
| SW6N60 | MOSFET |
| SW6N90 | N-channel TO-262 MOSFET |
| SW601Q | N-Channel MOSFET |
| SW60N06T | MOSFET |
| SW630A | MOSFET |
SW6N65 Description
These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM...