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SEMTECH
SEMTECH

1SS367 Datasheet Preview

1SS367 Datasheet

SILICON EPITAXIAL S CHOTTKY BARRIER DIODE

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1SS367 pdf
1SS367
SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
High Speed Switching Applicatio
PINNING
Features
PIN
• Low forward voltage:
VF = 0.23V (typ.) @IF = 5mA
1
2
1
DESCRIPTION
Cathode
Anode
2
S3
Top View
Marking Code: "S3"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T j = 25? )
Parameter
Maximum (peak) Reverse Voltage
Reverse Voltage
Maximum (peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Symbol
VRM
VR
IFM
IO
IFSM
Ptot
TJ
Ts
Topr
Value
15
10
200
100
1
200
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
A
mW
?
?
?
Characteristics at T j = 25 ?
Parameter
Forward Voltage
Reverse Current
Total Capacitance
Test Conditions
IF = 1mA
IF = 5mA
IF = 100mA
VR = 10V
f = 1MHZ
Symbol
VF
VF
VF
IR
CT
Min
-
-
-
-
-
Typ
0.18
0.23
0.35
-
20
Max
-
0.30
0.50
20
40
Unit
V
V
V
µA
pF
РАДИОТЕХ
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
®



SEMTECH
SEMTECH

1SS367 Datasheet Preview

1SS367 Datasheet

SILICON EPITAXIAL S CHOTTKY BARRIER DIODE

No Preview Available !

1SS367 pdf
1SS367
300m
100m
30m
10m
3m
1m
300
100
Ta=100°C
75°C
50°C
25°C
IF - VF
0°C
-25°C
30
10
0
0.1 0.2 0.3 0.4
Forward Voltage VF (V)
0.5
CT-VR
40 f=1MHz
Ta=25°C
30
20
10
0
10m 30m 0.1 0.3 1 3 10
Reverse Voltage VR (V)
1m
300
100
IR - VR
Ta=100°C
75°C
30 50°C
10
3
1
300n
100n
25°C
0°C
-25°C
30n
10n
0 2 4 6 8 10 12 14
Reverse Voltage VR (V)
240
200
160
120
80
40
00
Ptot - Ta
Mounted on a glass
epoxy circuit board of
20*20mm, pad
dimension 4*4 mm
25 50 75 100 125
Ambient Temperature Ta (°C)
150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/08/2004


Part Number 1SS367
Description SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
Maker SEMTECH
Total Page 3 Pages
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