| Part number | 1SS367 |
|---|---|
| Datasheet | 1SS367-SEMTECH.pdf |
| File Size | 230.82 KB |
| Manufacturer | SEMTECH |
| Description | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
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Cathode Anode 2 S3 Top View Marking Code: "S3" Simplified outline SOD-323 and symbol Ratings (T j = 25? Characteristics at T j = 25.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS367 | Silicon Diode | Toshiba Semiconductor |
 |
1SS367 | 15V 100mA SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | EIC |
 |
1SS367 | HIGH SPEED SWITCHING DIODE | Kexin |
| Part Number | Description |
|---|---|
| 1SS368 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS314 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS352 | Silicon Epitaxial Planar Switching Diode |
| 1SS355 | SILICON EPITAXIAL PLANAR SWITCHING DIODES |
| 1SS373 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS389 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS390 | Band swithing diode |
| 1SS106 | SILICON SCHOTTKY BARRIER DIODE |
