Datasheet Details
| Part number | 1SS413 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 130.70 KB |
| Description | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| Download | 1SS413 Download (PDF) |
|
|
| Part number | 1SS413 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 130.70 KB |
| Description | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| Download | 1SS413 Download (PDF) |
|
|
|
Cathode Anode 12 Q Top View Marking Code: "Q" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM IO IFSM Ptot TJ Ts Value 25 20 100 50 1 100 125 - 55 to + 125 Unit V V mA mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 20 V Total Capacitance at VR = 0 V, f = 1 MHz Symbol VF IR CT Typ.
- 3.9 Max.
0.55 0.5 - Unit V µA pF SEMTECH ELECTRONICS LTD.
1SS413 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE for high speed switching application PINNING PIN 1.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
1SS413 | Schottky Barrier Diode | Toshiba |
|
1SS413CT | Schottky Barrier Diode | Toshiba |
| Part Number | Description |
|---|---|
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