MJE13003 Key Features
- Reverse Biased SOA with Inductive Loads TC=100oC
- Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC
- tc @ 1A, 100oC is 290 ns (Typ)
- 700V Blocking Capability
- SOA and Switching
- Part: MJE13003
- Manufacturer: SEMTECH
- Size: 187.16 KB
Other MJE13003 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJE13003 | 1.5 AMPERE NPN SILICON POWER TRANSISTORS |
Micro Commercial Components |
MJE13003 | NPN Silicon Plastic-Encapsulate Transistor |
Continental Device India |
MJE13003 | (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS |
Unisonic Technologies |
MJE13003 | NPN SILICON POWER TRANSISTOR |
onsemi |
MJE13003 | NPN Silicon Power Transistor |
MJE13003 Description
MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection circuits.
MJE13003 Applications
- Reverse Biased SOA with Inductive Loads TC=100oC
- Inductive Switching Matrix 0.5 to 1.5 Amp,25 and 100oC