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MJE13003 Datasheet

The MJE13003 is a Silicon NPN Power Transistors. Download the datasheet PDF and view key features and specifications below.

Part NumberMJE13003
ManufacturerSavantIC
Overview ·With TO-126 package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drive. V A A A A A A W MAX 3.12 UNIT /W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE13003 CHARACTERISTICS Tj=25 unles otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=10mA ;IB=0 400 V VCE(sat).
Part NumberMJE13003
DescriptionNPN EPITAXIAL PLANAR TRANSISTOR
ManufacturerARTCHIP
Overview The MJE13003 is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability Absolute Ma.
* High Speed Switching
* Low Saturation Voltage
* High Reliability Absolute Maximum Ratings (Ta=25°C)
* Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ...........................
Part NumberMJE13003
DescriptionNPN SILICON POWER TRANSISTOR
ManufacturerUnisonic Technologies
Overview These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.  FEA. * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability  APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits  ORDERING INFORM.
Part NumberMJE13003
DescriptionSILICON NPN POWER TRANSISTOR
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR MJE13003 is a silicon NPN power transistor designed for high speed power switching applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless oth. 1.5V, TC=100°C IEBO VEB=9.0V BVCEO IC=10mA 400 VCE(SAT) IC=0.5A, IB=0.1A VCE(SAT) IC=1.0A, IB=0.25A VCE(SAT) IC=1.5A, IB=0.5A VBE(SAT) IC=0.5A, IB=0.1A VBE(SAT) IC=1.0A, IB=0.25A hFE VCE=2.0V, IC=0.5A 8.0 hFE VCE=2.0V, IC=1.0A 5.0 fT VCE=10V, IC=100mA, f=1.0MHz 4.0 Cob VCB=10V, IE=.

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