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MJE13003 - NPN EPITAXIAL PLANAR TRANSISTOR

General Description

The MJE13003 is designed for high voltage.

High speed switching inductive circuits and amplifier applications.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage.
  • High Reliability Absolute Maximum Ratings (Ta=25°C).
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 3.5 W Total Power Dissipation (Tc=25°C) 30 W.
  • Maximum Voltages and Currents BVCBO Collector to Base Voltage 600 V BVCEO Collector to Emitter Voltage 400 V BVEBO Emitter to Base Voltage 8 V.

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Datasheet Details

Part number MJE13003
Manufacturer ARTCHIP
File Size 503.44 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet MJE13003 Datasheet

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Full PDF Text Transcription (Reference)

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Page No. : 1/3 MJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description The MJE13003 is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C).................................................................................... 3.5 W Total Power Dissipation (Tc=25°C) ................................................