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MJE13003-R

Manufacturer: Unisonic Technologies

MJE13003-R datasheet by Unisonic Technologies.

MJE13003-R datasheet preview

MJE13003-R Datasheet Details

Part number MJE13003-R
Datasheet MJE13003-R-UnisonicTechnologies.pdf
File Size 363.58 KB
Manufacturer Unisonic Technologies
Description NPN SILICON TRANSISTOR
MJE13003-R page 2 MJE13003-R page 3

MJE13003-R Overview

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.

MJE13003-R Key Features

  • Reverse biased SOA with inductive load @ TC=100°C
  • Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
  • 700V blocking capability

MJE13003-P from other manufacturers

View MJE13003-P datasheet index

Brand Logo Part Number Description Other Manufacturers
UTC Logo MJE13003-P NPN SILICON TRANSISTOR UTC
UTC Logo MJE13003-XS NPN SILICON POWER TRANSISTOR UTC
Motorola Logo MJE13003 1.5 AMPERE NPN SILICON POWER TRANSISTORS Motorola
SEMTECH Logo MJE13003 NPN Silicon Power Transistors SEMTECH
MCC Logo MJE13003 NPN Silicon Plastic-Encapsulate Transistor MCC
Unisonic Technologies logo - Manufacturer

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