Part MJE13003-V
Description NPN SILICON TRANSISTOR
Category Transistor
Manufacturer Unisonic Technologies
Size 401.08 KB
Unisonic Technologies

MJE13003-V Overview

Description

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.

Key Features

  • * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C
  • * 700V blocking capability