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MJE13003-V

Manufacturer: Unisonic Technologies
MJE13003-V datasheet preview

Datasheet Details

Part number MJE13003-V
Datasheet MJE13003-V-UnisonicTechnologies.pdf
File Size 401.08 KB
Manufacturer Unisonic Technologies
Description NPN SILICON TRANSISTOR
MJE13003-V page 2 MJE13003-V page 3

MJE13003-V Overview

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.

MJE13003-V Key Features

  • Reverse biased SOA with inductive load @ TC=100°C
  • Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
  • 700V blocking capability

MJE13003-V Applications

  • Reverse biased SOA with inductive load @ TC=100°C

MJE13003-P from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
UTC Logo MJE13003-P NPN SILICON TRANSISTOR UTC
UTC Logo MJE13003-XS NPN SILICON POWER TRANSISTOR UTC
Motorola Logo MJE13003 1.5 AMPERE NPN SILICON POWER TRANSISTORS Motorola
SEMTECH Logo MJE13003 NPN Silicon Power Transistors SEMTECH
MCC Logo MJE13003 NPN Silicon Plastic-Encapsulate Transistor MCC
Unisonic Technologies logo - Manufacturer

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