Datasheet Details
| Part number | MJE13003 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 409.09 KB |
| Description | SILICON NPN POWER TRANSISTOR |
| Datasheet | MJE13003-CentralSemiconductor.pdf |
|
|
Overview: MJE13003 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i .
| Part number | MJE13003 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 409.09 KB |
| Description | SILICON NPN POWER TRANSISTOR |
| Datasheet | MJE13003-CentralSemiconductor.pdf |
|
|
|
: The CENTRAL SEMICONDUCTOR MJE13003 is a silicon NPN power transistor designed for high speed power switching applications.
MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Emitter Voltage VCEO Collector-Emitter Voltage VCEV Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Peak Base Current IBM Continuous Emitter Current IE Peak Emitter Current IEM Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 400 700 9.0 1.5 3.0 0.75 1.5 2.25 4.5 40 1.4 -65 to +150 89.0 3.12 UNITS V V V A A A A A A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=700V, VBE(OFF)=1.5V ICEV VCE=700V, VBE(OFF)=1.5V, TC=100°C IEBO VEB=9.0V BVCEO IC=10mA 400 VCE(SAT) IC=0.5A, IB=0.1A VCE(SAT) IC=1.0A, IB=0.25A VCE(SAT) IC=1.5A, IB=0.5A VBE(SAT) IC=0.5A, IB=0.1A VBE(SAT) IC=1.0A, IB=0.25A hFE VCE=2.0V, IC=0.5A 8.0 hFE VCE=2.0V, IC=1.0A 5.0 fT VCE=10V, IC=100mA, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz 40 MAX 1.0 5.0 1.0 0.5 1.0 3.0 1.0 1.2 40 25 UNITS mA mA mA V V V V V V MHz pF R1 (23-October 2013) MJE13003 SILICON NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX td Resistive Load 0.1 tr VCC=125V, IC=1.0A, IB1=IB2=0.2A 1.0 ts tp=25μs, Duty Cycle < 1.0% 4.0 tf 0.7 tsv Inductive Load tc IC=1.0A, Vclamp=300V, IB1=0.2A tfi VBE(off)=5.0V, TC=100°C 0.15 4.0 0.75 TO-126 CASE - MECHANICAL OUTLINE UNITS μs μs μs μs μs μs μs w w w.
c e n t r a l s e m i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJE13003 | 1.5 AMPERE NPN SILICON POWER TRANSISTORS | Motorola |
 |
MJE13003 | NPN Silicon Power Transistors | SEMTECH |
 |
MJE13003 | NPN Silicon Plastic-Encapsulate Transistor | MCC |
 |
MJE13003 | (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS | CDIL |
 |
MJE13003 | NPN SILICON POWER TRANSISTOR | UTC |
| Part Number | Description |
|---|---|
| MJE13004 | NPN SILICON POWER TRANSISTOR |
| MJE13005 | NPN SILICON POWER TRANSISTOR |
| MJE13005 | NPN SILICON POWER TRANSISTOR |
| MJE13008 | SILICON NPN TRANSISTORS |
| MJE13009 | SILICON NPN TRANSISTORS |
| MJE15028 | NPN Transistor |
| MJE15029 | PNP Transistor |
| MJE15030 | NPN Transistor |
| MJE15031 | PNP Transistor |
| MJE170 | POWER TRANSISTOR |