MJE13001 - NPN Epitaxial Silicon Transistor

Unisonic Technologies

Key Features

S.
Collector-base voltage: V(BR)CBO=600V.
Collector current: IC=0.2A.

MJE13001 npn epitaxial silicon transistor by Unisonic Technologies - Datasheet Preview

Datasheet Details

Part number	MJE13001
Manufacturer	Unisonic Technologies
File Size	209.20 KB
Description	NPN Epitaxial Silicon Transistor
Datasheet	MJE13001 Datasheet

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UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - MJE13001G-x-AB3-A-R SOT-89 - MJE13001G-x-AB3-F-R SOT-89 MJE13001L-x-T92-B MJE13001G-x-T92-B TO-92 MJE13001L-x-T92-K MJE13001G-x-T92-K TO-92 MJE13001L-x-T92-A-B MJE13001G-x-T92-A-B TO-92 MJE13001L-x-T92-A-K MJE13001G-x-T92-A-K TO-92 Note: Pin Assignment: C: Collector B: Base E: Emitter Pin Assignment 123 ECB BCE BCE BCE ECB ECB Packing Tape Reel Tape Reel Tape Box Bulk Tape Box Bulk  MARKING SOT-89 TO-92 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R201-055.