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SGM48211 - High Frequency High-side and Low-side Driver

General Description

The SGM48211 is a half-bridge MOSFET driver with 4A peak source and sink output current capability, which makes it possible to drive large power MOSFETs with minimized switching losses.

Key Features

  • Wide Operating Range: 8V to 17V.
  • Drive Two N-MOSFETs Configured in Half Bridge.
  • Maximum Blocking Voltage: 120V DC.
  • Integrated Internal Bootstrap Diode for Cost Saving.
  • 4A Peak Sink and Source Currents.
  • -10V to 20V Tolerance of Input Pins.
  • COMS/TTL Compatible Inputs.
  • 6.5ns (TYP) Rise Time and 4.5ns (TYP) Fall Time with 1000pF Load.
  • Propagation Delay Time: 31ns (TYP).
  • Delay Matching: 3ns (TYP).
  • UVLO Functions for Both High-side and Low-side D.

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Datasheet Details

Part number SGM48211
Manufacturer SG Micro
File Size 721.02 KB
Description High Frequency High-side and Low-side Driver
Datasheet download datasheet SGM48211 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGM48211 120V Boot, 4A Peak, High Frequency High-side and Low-side Driver GENERAL DESCRIPTION The SGM48211 is a half-bridge MOSFET driver with 4A peak source and sink output current capability, which makes it possible to drive large power MOSFETs with minimized switching losses. The two channels of high-side and low-side are totally independent with 3ns (TYP) delay matching between the turn-on and turn-off of each other. The maximum withstanding voltage of the input stage of SGM48211 is 20V. Due to the -10VDC voltage endurance capacity of its input stage, the driver has enhanced robustness and can be interfaced to pulse transformers directly without using rectifier diodes. With a wide input hysteresis, the device can receive analog or digital PWM signals with improved noise immunity.