SGS-THOMSON

BD910 Datasheet Preview

BD910 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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BD907/909/911

BD908/910/912

COMPLEMENTARY SILICON POWER TRANSISTORS

n BD908, BD909, BD910, BD911 AND BD912

SGS-THOMSON PREFERRED SALESTYPES

DESCRIPTION

The BD707, BD709, and BD711 are silicon

epitaxial-base NPN power transistors in Jedec

TO-220 plastic package, intented for use in

power linear and switching applications.

The complementary PNP types are BD908,

BD910, and BD912 respectively.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

P ara me t er

VCBO Collect or-Base Voltage (IE = 0)

VCEO Collector-Emitter Voltage (IB = 0)

VEBO Emit ter-Base Volt age (IC = 0)

IE,IC Collect or Current

IB Base Current

Ptot T otal Dissipation at Tc ≤ 25 oC

Ts tg Storage T emperature

Tj Max. Operating Junction T emperature

For PNP types voltage and current values are negative.

October 1995

NPN

PNP

BD907

BD908

V alu e

BD909

BD910

-65 to 150

150

BD911

BD912

100

Unit

1/4

SGS-THOMSON

BD910 Datasheet Preview

BD910 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

BD907/BD908/BD909/BD910/BD911/BD912

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-case

Max

1. 67

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

ICBO

Parameter

Collector Cut-off

Current (IE = 0)

ICEO

Collector Cut-off

Current (IB = 0)

IEBO

Emitter Cut- off Current

(IC = 0)

VCEO(sus)∗ Collector-Emitt er

Sustaining Voltage

(IB = 0)

VCE(sat)∗ Collector-Emitt er

Saturation Voltage

VBE(sat)∗ Base-Emitter

Saturation Voltage

VBE∗ Base-Emitter Voltage

hFE∗ DC Current Gain

T est Con ditio ns

for BD907/908

for BD909/910

for BD911/912

Tcase = 150 oC

for BD907/908

for BD909/910

for BD911/912

VCB = 60 V

VCB = 80 V

VCB = 100 V

VCB = 60 V

VCB = 80 V

VCB = 100 V

for BD907/908

for BD909/910

for BD911/912

VCB = 30 V

VCB = 40 V

VCB = 50 V

VEB = 5 V

IC = 100 mA

IC = 5 A

IC = 10 A

for BD907/908

for BD909/910

for BD911/912

IB = 0.5 A

IB = 2.5 A

IC = 5 A

IC = 0.5 A

IC = 5 A

IC = 10 A

VCE = 4 V

Min. Typ.

100

Max.

500

2 .5

1 .5

250

150

Unit

µA

fT Transition frequency IC = 0.5 A

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

** Value for which IC = 3.3 A at VCE = 2V.

For PNP types voltage and current values are negative.

VCE = 4 V

MHz

2/4

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BD910 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

BD910 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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