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SGS-THOMSON

BD912 Datasheet Preview

BD912 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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BD907/909/911
BD908/910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
n BD908, BD909, BD910, BD911 AND BD912
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BD707, BD709, and BD711 are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
power linear and switching applications.
The complementary PNP types are BD908,
BD910, and BD912 respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
P ara me t er
VCBO Collect or-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emit ter-Base Volt age (IC = 0)
IE,IC Collect or Current
IB Base Current
Ptot T otal Dissipation at Tc 25 oC
Ts tg Storage T emperature
Tj Max. Operating Junction T emperature
For PNP types voltage and current values are negative.
October 1995
NPN
PNP
BD907
BD908
60
60
V alu e
BD909
BD910
80
80
5
15
5
90
-65 to 150
150
BD911
BD912
100
100
Unit
V
V
V
A
A
W
oC
oC
1/4




SGS-THOMSON

BD912 Datasheet Preview

BD912 Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

BD907/BD908/BD909/BD910/BD911/BD912
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
1. 67
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
ICBO
Parameter
Collector Cut-off
Current (IE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut- off Current
(IC = 0)
VCEO(sus)Collector-Emitt er
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitt er
Saturation Voltage
VBE(sat)Base-Emitter
Saturation Voltage
VBEBase-Emitter Voltage
hFEDC Current Gain
T est Con ditio ns
for BD907/908
for BD909/910
for BD911/912
Tcase = 150 oC
for BD907/908
for BD909/910
for BD911/912
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
for BD907/908
for BD909/910
for BD911/912
VCB = 30 V
VCB = 40 V
VCB = 50 V
VEB = 5 V
IC = 100 mA
IC = 5 A
IC = 10 A
IC = 10 A
for BD907/908
for BD909/910
for BD911/912
IB = 0.5 A
IB = 2.5 A
IB = 2.5 A
IC = 5 A
IC = 0.5 A
IC = 5 A
IC = 10 A
VCE = 4 V
VCE = 4 V
VCE = 4 V
VCE = 4 V
Min. Typ.
60
80
100
40
15
5
Max.
500
500
500
5
5
5
1
1
1
1
1
3
2 .5
1 .5
250
150
Unit
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
fT Transition frequency IC = 0.5 A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
** Value for which IC = 3.3 A at VCE = 2V.
For PNP types voltage and current values are negative.
VCE = 4 V
3
MHz
2/4


Part Number BD912
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Maker SGS-THOMSON
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BD912 Datasheet PDF






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