Datasheet4U Logo Datasheet4U.com

S60N10M Datasheet N-CHANNEL POWER MOSFET

Manufacturer: SI-TECH

Overview: SI-TECH SEMICONDUCTOR CO.,LTD S60N10M N-Channel MOSFET.

Download the S60N10M datasheet PDF. This datasheet also includes the S60N10M-SI variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number S60N10M
Manufacturer SI-TECH
File Size 359.32 KB
Description N-CHANNEL POWER MOSFET
Download S60N10M Download (PDF)

General Description

This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.

Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS PD TJ TSTG Parameter Drain-Source Voltage(TC=25 ℃) Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Symbol Rth j-c Rth c-s Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Case to Sink Thermal Resistance, Junction to Ambient Value 60 100 71 400 ±25 400 114 0.76 -55 to +175 -55 to +175 Max.

Key Features

  • 60V, 100A,Rds(on)(typ)=5mΩ @Vgs=10V.
  • High Ruggedness.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability General.