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SVD7N65AF - 650V N-CHANNEL MOSFET

Download the SVD7N65AF datasheet PDF. This datasheet also covers the SVD7N65AT variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

structure DMOS technology.

Key Features

  • ∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVD7N65AT-SILAN.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD7N65AF
Manufacturer SILAN
File Size 565.00 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVD7N65AF Datasheet

Other Datasheets by SILAN

Part Number Description
SVD7N65AT 650V N-CHANNEL MOSFET
SVD4N60D 600V N-Channel MOSFET
SVD4N60DTR 600V N-Channel MOSFET
SVD4N60F 600V N-Channel MOSFET
SVD4N60FG 600V N-Channel MOSFET
SVD4N60T 600V N-Channel MOSFET
SVD4N65F (SVD4N65T / SVD4N65F) 650V N-CHANNEL MOSFET
SVD4N65M (SVD4N65T/F/M) 650V N-CHANNEL MOSFET
SVD4N65T (SVD4N65T / SVD4N65F) 650V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVD7N65AT/F_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD7N65AT/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 7A,650V,RDS(on)(typ)=1.1 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No.