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SSF7N60 Datasheet N-Channel MOSFET

Manufacturer: SILIKRON

Datasheet Details

Part number SSF7N60
Manufacturer SILIKRON
File Size 406.87 KB
Description N-Channel MOSFET
Download SSF7N60 Download (PDF)

General Description

The SSF7N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.

Application ■ High current, high speed switching ■ Ideal for off-line power supply, adaptor, PFC VDSS = 600V ID = 7A Rdson = 0.9Ω (typ.) SSF7N60 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Max.

7.2 4.8 28.8 145 0.8 ±30 586 4 15 4.5 –55 to +150 Thermal Resistance RθJC RθCS Parameter Junction-to-case Case-to-Sink,Flat,Greased Surface Min.

Overview

SSF7N60.

Key Features

  • Extremely high dv/dt capability.
  • Low Gate Charge Qg results in Simple Drive Requirement.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability.