Datasheet Details
| Part number | SSF7N60 |
|---|---|
| Manufacturer | SILIKRON |
| File Size | 406.87 KB |
| Description | N-Channel MOSFET |
| Download | SSF7N60 Download (PDF) |
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| Part number | SSF7N60 |
|---|---|
| Manufacturer | SILIKRON |
| File Size | 406.87 KB |
| Description | N-Channel MOSFET |
| Download | SSF7N60 Download (PDF) |
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The SSF7N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
Application ■ High current, high speed switching ■ Ideal for off-line power supply, adaptor, PFC VDSS = 600V ID = 7A Rdson = 0.9Ω (typ.) SSF7N60 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Max.
7.2 4.8 28.8 145 0.8 ±30 586 4 15 4.5 –55 to +150 Thermal Resistance RθJC RθCS Parameter Junction-to-case Case-to-Sink,Flat,Greased Surface Min.
SSF7N60.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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SSF7N60A | Advanced Power MOSFET | Samsung Electronics |
| SSF7N60B | 600V N-Channel MOSFET | Fairchild Semiconductor | |
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SSF7N60F | 600V N-Channel MOSFET | GOOD-ARK |
| Part Number | Description |
|---|---|
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| SSF7NS60F | N-Channel MOSFET |
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| SSF7NS65UF | N-Channel MOSFET |
| SSF7NS65UG | N-Channel MOSFET |
| SSF7NS70UG | N-Channel MOSFET |
| SSF7NS70UGX | N-Channel MOSFET |
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