• Part: SSF8N65
  • Manufacturer: SILIKRON
  • Size: 407.31 KB
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SSF8N65 Key Features

  • Extremely high dv/dt capability
  • Low Gate Charge Qg results in Simple Drive Requirement
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • High current, high speed switching
  • Ideal for off-line power supply, adaptor, PFC

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SSF8N65 Description

The SSF8N65 is a new generation of high voltage N Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. 0.86 0.50 RθJA...