Datasheet Details
| Part number | SSF8N65 |
|---|---|
| Manufacturer | SILIKRON |
| File Size | 407.31 KB |
| Description | N-Channel MOSFET |
| Download | SSF8N65 Download (PDF) |
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| Part number | SSF8N65 |
|---|---|
| Manufacturer | SILIKRON |
| File Size | 407.31 KB |
| Description | N-Channel MOSFET |
| Download | SSF8N65 Download (PDF) |
|
|
|
The SSF8N65 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.
Application ■ High current, high speed switching ■ Ideal for off-line power supply, adaptor, PFC VDSS = 650V ID = 8A Rdson = 0.95Ω (typ.) SSF8N65 TOP View (TO220) Absolute Maximum Ratings Parameter ID@Tc=25 ْC ID@Tc=100ْC Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Max.
8.2 5.5 32.8 145 0.8 ±30 586 4 15 4.5 –55 to +150 Thermal Resistance RθJC RθCS Parameter Junction-to-case Case-to-Sink,Flat,Greased Surface Min.
SSF8N65.
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