H5TQ1G63EFR-xxL Overview
Description
The H5TQ1G6(8)3EFR-xxx series are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. 1Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock.
Key Features
- DQ Power & Power supply : VDD & VDDQ = 1.5V +/0.075V
- DQ Ground supply : VSSQ = Ground
- Fully differential clock inputs (CK, CK) operation
- Differential Data Strobe (DQS, DQS)
- On chip DLL align DQ, DQS and DQS transition with CK transition
