SVF2N60M Datasheet PDF (600V N-CHANNEL MOSFET)

SVF2N60M - 600V N-CHANNEL MOSFET

Description

SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

2A,600V,RDS(on)(typ. )=3.7@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability 12 3 TO-251J-3L 12 3 TO-220F-3L.

Datasheet Details

Part number	SVF2N60M
Manufacturer	SL
File Size	419.59 KB
Description	600V N-CHANNEL MOSFET
Datasheet	SVF2N60M Datasheet
Additional preview pages of the SVF2N60M datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 1 1 23 3 TO-126F-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L 1 23 TO-251D-3L FEATURES  2A,600V,RDS(on)(typ.)=3.

Published: Jul 3, 2014 |