SLP2N60C - N-Channel MOSFET

Datasheet Details

Part number	SLP2N60C
Manufacturer	SL SEMI
File Size	314.97 KB
Description	N-Channel MOSFET
Datasheet	SLP2N60C Datasheet

General Description

This Pow er MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.

Overview

SLP2N60C / SLF2N60C 600V N-Channel MOSFET General.

Key Features

2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V.
Low gate charge ( typical 9nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sourc.

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