ST75N75 mosfet equivalent, n-channel enhancement mode mosfet.
PIN CONFIGURATION TO220-3L
FEATURE
75V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V
Super high density cell design for extr.
ST75N75 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION TO220-3L
FEATURE
75V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V
Super high densi.
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