ST7407 Overview
Description
The ST7407 is the P-Channel logic enhancement mode power field effect transistors It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- V1 ST7407 P Channel Enhancement Mode MOSFET
- 20 ±12 -2.3 -1.7 -6 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ
- 1.4 0.35 0.22 150 Storgae Temperature Range TSTG
