ST7400 Datasheet | STANSON

DESCRIPTION ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 (SC-70) 1.Gate 2.Source 3.Drain PART MARKING SOT-323 FEATURE 30V/2.8A, RDS(ON) = 77mΩ @VGS =10V 30V/2.5A, RDS(ON) = 85mΩ @VGS = 4.5V 30V/1.5A, RDS(ON) = 170mΩ @VGS = 2.5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-323 (SC-70) package design 00YW Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. ST7400 2005. V1 N Channel Enhancement Mode MOSFET 2.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS Gate-Source Voltage VGSS ±12 Continuous Drain Current TJ=150℃) TA=25℃ TA=70℃ 2.8 2.3 Pulsed Drain Current Continuous Source Current (Diode...