ST7400 Datasheet PDF

STANSON ST7400

ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.

Part No.	ST7400
Datasheet	ST7400 Download
Manufacturer	STANSON
Description	N-Channel Enhancement Mode MOSFET
Buy	Stock & Price

DESCRIPTION

The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-323 (SC-70) 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-323 FEATURE 30V/2.8A, RDS(ON) = 77mΩ @VGS =10V 30V/2.5A, RDS(ON) = 85mΩ @VGS = 4.5V 30V/1.5A, RDS(ON) = 170mΩ @VGS = 2.5V Super high density cell design for Extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-323 (SC-70) package design 3 00YW 1 2 Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST7400 2005. V1 ST7400 N Channel Enhancement Mode MOSFET 2.8A ABSOULTE

MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±12 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ ID 2.8 2.3 Pulsed Drain Current IDM 10 Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ TA=70℃ PD Operation Junction Temperature TJ 1.25 0.33 0.21 150 Storage Temperature Range TSTG -55/...