Datasheet Details
| Part number | P6NB80FP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 231.35 KB |
| Description | STP6NB80FP |
| Download | P6NB80FP Download (PDF) |
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| Part number | P6NB80FP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 231.35 KB |
| Description | STP6NB80FP |
| Download | P6NB80FP Download (PDF) |
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1 1 Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics.
DataSheet4U.com DataShee APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max.
www.DataSheet4U.com www.DataSheet4U.com STP6NB80 STP6NB80FP N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220/TO-220FP PowerMESH ™ MOSFET PRELIMINARY DATA TYPE ST P6NB80 ST P6NB80FP s s s s s V DSS 800 V 800 V R DS(on) < 1.9 Ω < 1.9 Ω ID 5.7 A 5.7 A TYPICAL RDS(on) = 1.
| Part Number | Description |
|---|---|
| P6N25 | STP6N25 |
| P6N60FI | STP6N60FI |
| P6NA60FI | STP6NA60FI |
| P6NC60 | STP6NC60 |
| P6NC80 | STP6NC80 |
| P6NK90Z | N-CHANNEL MOSFET |