100N10LF7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD100N10LF7AG AM01475v1_Tab Table 1: Device summary Marking Package 100N10LF7 DPAK Packing Tape and reel June 2016 DocID029501 Rev 1 This is information on a...
100N10LF7 Key Features
- Designed for automotive