100N10LF7 Datasheet, STMicroelectronics

Order code STD100N10LF7AG VDS 100 V RDS(on) max. 9 mΩ ID 80 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)
* Designed for automotive applications and.

and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order .