Overview: HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 V I DSS D25 100 V 100 A 100 V 150 A trr £ 200 ns R DS(on)
12 mW 12 mW TO-264 AA (IXFK) Symbol
VDSS VDGR VGS VGSM ID25 ID120 I
DM
I
AR
EAR dv/dt
PD T
J
T JM
Tstg TL VISOL
Md
Weight
Symbol
V DSS
VGH(th) IGSS IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient TC = 25°C TC = 120°C, limited by external leads T C = 25°C, pulse width limited by T JM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS t = 1 min I
ISOL £ 1 mA t=1s Mounting torque Terminal connection torque Maximum Ratings IXFK IXFN 100 100 100 100 ±20 ±20 ±30 ±30 100 150 76 - 560 560 75 75 30 30 5 5 V V V V A A A A mJ V/ns 500 520 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 - °C - 2500 V~ - 3000 V~ 0.9/6 - 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 10 30 g Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I = 1 mA 100 GS D VDS = VGS, ID = 8 mA 2 VGS = ±20 VDC, VDS = 0 VDS = 0.
