The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFK100N10 IXFN150N10
V
I
DSS
D25
100 V 100 A
100 V 150 A
trr £ 200 ns
R DS(on)
12 mW 12 mW
TO-264 AA (IXFK)
Symbol
VDSS VDGR VGS VGSM ID25 ID120 I
DM
I
AR
EAR dv/dt
PD T
J
T JM
Tstg TL VISOL
Md
Weight
Symbol
V DSS
VGH(th) IGSS IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 120°C, limited by external leads
T C
=
25°C,
pulse
width
limited
by
T JM
T C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.
100N10 Datasheet
